Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structure
Identifieur interne : 00FF09 ( Main/Repository ); précédent : 00FF08; suivant : 00FF10Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structure
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Abstract
Using room-temperature surface photovoltage spectroscopy (SPS), we have characterized a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structure. Signals have been observed from every region of the sample. From a line shape fit to the normalized first derivative of the surface photovoltage signal with respect to photon energy, the two-dimensional electron gas density (Ns) was obtained and found to be in good agreement with Hall measurement. The Al composition and the properties of the GaAs/GaAlAs superlattice buffer layer also were obtained from the SPS spectrum. The results demonstrate the considerable potential of SPS for the contactless and nondestructive characterization of pHEMT structures at room temperature. © 2001 American Institute of Physics.
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Cheng</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106</wicri:regionArea><wicri:noRegion>Taipei 106</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electronic Engineering, Nan Kai College of Technology and Commerce, Tsao-Tun 202, Taiwan</s1></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronic Engineering, Nan Kai College of Technology and Commerce, Tsao-Tun 202</wicri:regionArea><wicri:noRegion>Tsao-Tun 202</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202, Taiwan</s1></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202</wicri:regionArea><wicri:noRegion>Keelung 202</wicri:noRegion></affiliation><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 11210</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>Quantum Epitaxial Designs, Incorporated, Bethlehem, Pennsylvania 18015</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Pennsylvanie</region></placeName><wicri:cityArea>Quantum Epitaxial Designs, Incorporated, Bethlehem</wicri:cityArea></affiliation></author><author><name sortKey="Huang, Y S" uniqKey="Huang Y">Y. S. Huang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106</wicri:regionArea><wicri:noRegion>Taipei 106</wicri:noRegion></affiliation></author><author><name sortKey="Lin, D Y" uniqKey="Lin D">D. Y. Lin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106</wicri:regionArea><wicri:noRegion>Taipei 106</wicri:noRegion></affiliation></author><author><name sortKey="Tiong, K K" uniqKey="Tiong K">K. K. Tiong</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106</wicri:regionArea><wicri:noRegion>Taipei 106</wicri:noRegion></affiliation></author><author><name sortKey="Pollak, Fred H" uniqKey="Pollak F">Fred H. Pollak</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106</wicri:regionArea><wicri:noRegion>Taipei 106</wicri:noRegion></affiliation></author><author><name sortKey="Evans, K R" uniqKey="Evans K">K. R. Evans</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106</wicri:regionArea><wicri:noRegion>Taipei 106</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0329081</idno><date when="2001-08-13">2001-08-13</date><idno type="stanalyst">PASCAL 01-0329081 AIP</idno><idno type="RBID">Pascal:01-0329081</idno><idno type="wicri:Area/Main/Corpus">010D05</idno><idno type="wicri:Area/Main/Repository">00FF09</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Experimental study</term><term>Gallium arsenides</term><term>Hall effect</term><term>High electron mobility transistors</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Two-dimensional electron gas</term><term>surface photovoltage</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8530T</term><term>7325</term><term>7350P</term><term>7361E</term><term>7350J</term><term>Etude expérimentale</term><term>Gallium arséniure</term><term>Aluminium composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Transistor mobilité électron élevée</term><term>Gaz électron 2 dimensions</term><term>Effet Hall</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Using room-temperature surface photovoltage spectroscopy (SPS), we have characterized a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structure. Signals have been observed from every region of the sample. From a line shape fit to the normalized first derivative of the surface photovoltage signal with respect to photon energy, the two-dimensional electron gas density (N<sub>s</sub>) was obtained and found to be in good agreement with Hall measurement. The Al composition and the properties of the GaAs/GaAlAs superlattice buffer layer also were obtained from the SPS spectrum. The results demonstrate the considerable potential of SPS for the contactless and nondestructive characterization of pHEMT structures at room temperature. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>79</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structure</s1></fA08><fA11 i1="01" i2="1"><s1>CHENG (Y. T.)</s1></fA11><fA11 i1="02" i2="1"><s1>HUANG (Y. S.)</s1></fA11><fA11 i1="03" i2="1"><s1>LIN (D. Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>TIONG (K. K.)</s1></fA11><fA11 i1="05" i2="1"><s1>POLLAK (Fred H.)</s1></fA11><fA11 i1="06" i2="1"><s1>EVANS (K. R.)</s1></fA11><fA14 i1="01"><s1>Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electronic Engineering, Nan Kai College of Technology and Commerce, Tsao-Tun 202, Taiwan</s1></fA14><fA14 i1="03"><s1>Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202, Taiwan</s1></fA14><fA14 i1="04"><s1>Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 11210</s1></fA14><fA14 i1="05"><s1>Quantum Epitaxial Designs, Incorporated, Bethlehem, Pennsylvania 18015</s1></fA14><fA20><s1>949-951</s1></fA20><fA21><s1>2001-08-13</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0329081</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Using room-temperature surface photovoltage spectroscopy (SPS), we have characterized a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structure. Signals have been observed from every region of the sample. From a line shape fit to the normalized first derivative of the surface photovoltage signal with respect to photon energy, the two-dimensional electron gas density (N<sub>s</sub>) was obtained and found to be in good agreement with Hall measurement. The Al composition and the properties of the GaAs/GaAlAs superlattice buffer layer also were obtained from the SPS spectrum. The results demonstrate the considerable potential of SPS for the contactless and nondestructive characterization of pHEMT structures at room temperature. © 2001 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F04</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C25</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C50P</s0></fC02><fC02 i1="04" i2="3"><s0>001B70C61E</s0></fC02><fC02 i1="05" i2="3"><s0>001B70C50J</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8530T</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7325</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7350P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7361E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7350J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Transistor mobilité électron élevée</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>High electron mobility transistors</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>surface photovoltage</s0><s4>INC</s4></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Gaz électron 2 dimensions</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Two-dimensional electron gas</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Effet Hall</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Hall effect</s0></fC03><fN21><s1>225</s1></fN21><fN47 i1="01" i2="1"><s0>0132M000089</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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